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elm5964 - 16f c - band internally matched fet 1 features ? high output power: p1db= 42.5dbm ( typ) ? high gain: g1db=10.0db (typ.) ? high pae: ? add=40 %( typ.) ? frequency band: 5.9~6.4ghz ? impedance matched zin/zout = 50 ? ? hermetically sealed package description the elm5964 - 16f is a power gaas fet that is internally matched for standard communication bands to provide optimum power and gain in a 50 ? system. absolute maximum rating ( case temperature t c =25 deg - c) item symbol rating unit drain - source voltage v ds 15 v gate - source voltage v gs - 5 v total power dissipation p t 46.9 w storage temperature t stg - 65 to +1 7 5 deg - c channel temperature t ch 175 deg - c recommended operating condition ( case temperature tc=25 deg - c) item symbol condition limit unit dc input voltage v ds <10 v forward gate current i gf r g = 51 ohm <+ 43.0 ma reverse gate current i gr r g = 51 ohm > - 11.0 ma storage temperature t stg - 55 to +1 2 5 deg - c channel temperature t ch 155 deg - c electrical characteristics ( case temperature t c =25 deg - c) item symbol condition limit unit min. typ. max. drain current i dss v ds =5v, v gs =0v - 7.6 11.4 a trans conductance gm v ds =5v, i ds = 42 00ma - 5 - s pinch - off voltage v p v ds =5v, i ds = 300 ma - 0.5 - 1.5 - 3.0 v gage - source breakdown voltage v gso i gs =85ua - 5.0 - - v output power at 1db g.c.p . p 1db v ds =10v i ds ( dc ) = 2.8a(typ.) f = 5.9 ~ 6.4 ghz 41.5 42.5 - dbm power gain at 1db g.c.p . g 1db 9.0 10.0 - db drain current i dsr - 4.0 5.0 a power a dded efficiency ? add - 4 0 - % gain flatness ? g - - 1. 2 db 3 rd order inter m odulation distortion im 3 f= 6 . 4 ghz ? f=10mhz, 2 - tone test pout= 3 1 .5dbm (s.c.l) - 4 0 - 45 - dbc r th r th channel to case - 2.7 3.2 d eg - c/w ? t ch ? t ch ( v ds x i dsr C p out + p in ) x r th - - 10 0 deg - c case style : i k esd class 3 a 4000 - 8000v note: based on jedec jesd22 - a114d (c=100pf, r=1500 ?
elm5964 - 16f c - band internally matched fet 2 ? rf characteristics 0 10 20 30 40 50 0 50 100 150 200 total power dissipation (w) case temperature ( o c) power derating curve 0 20 40 60 80 100 120 33 35 37 39 41 43 45 22 24 26 28 30 32 34 36 p.a.e(%) output power(dbm) input power(dbm) output power & p.a.e. vs. input power v ds =10v, i ds(dc) =2.8a 5.85ghz 6.0ghz 6.15ghz 6.3ghz 6.45ghz 6.725ghz 33 34 35 36 37 38 39 40 41 42 43 44 45 5.6 5.7 5.8 5.9 6.0 6.1 6.2 6.3 6.4 6.5 6.6 6.7 6.8 6.9 output power(dbm) frequency(ghz) output power vs. frequency v ds =10v, i ds(dc) =2.8a 24dbm 26dbm 28dbm 30dbm 32dbm 34dbm - 75 - 70 - 65 - 60 - 55 - 50 - 45 - 40 - 35 - 30 - 25 22 24 26 28 30 32 34 36 38 40 imd(dbc) output power [s.c.l](dbm) output power vs. imd v ds =10v, i ds(dc) =2.8a 5.85ghz 6.0ghz 6.15ghz 6.3ghz 6.45ghz 6.725ghz
elm5964 - 16f c - band internally matched fet 3 input power vs. output power, power added efficiency by drain voltage i ds(dc) =2800ma @5.9ghz input power vs. output power, power added efficiency by drain voltage i ds(dc) =2800ma @6.15ghz input power vs. output power, power added efficiency by drain voltage i ds(dc) =2800ma @6.4ghz 0 20 40 60 80 100 34 36 38 40 42 44 22 24 26 28 30 32 34 36 power added efficiency [%] output power [dbm] input power [dbm] vds 8v vds 9v vds 10 v 0 20 40 60 80 100 34 36 38 40 42 44 22 24 26 28 30 32 34 36 power added efficiency [%] output power [dbm] input power [dbm] vds 8v vds 9v vds 10v 0 20 40 60 80 100 34 36 38 40 42 44 22 24 26 28 30 32 34 36 power added efficiency [%] output power [dbm] input power [dbm] vds 8v vds 9 v vds 10v
elm5964 - 16f c - band internally matched fet 4 input power vs. output power, power added efficiency by quie scent drain current v ds =10v @5.9ghz input power vs. output power, power added efficiency by quie scent drain current v ds =10v @6.15ghz input power vs. output power, power added efficiency by quie scent drain current v ds =10v @6.4ghz 0 20 40 60 80 100 34 36 38 40 42 44 22 24 26 28 30 32 34 36 power added efficiency [%] output power [dbm] input power [dbm] ids(dc) 2.4a ids(dc) 2.8a ids(dc) 3.2a 0 20 40 60 80 100 34 36 38 40 42 44 22 24 26 28 30 32 34 36 power added efficiency [%] output power [dbm] input power [dbm] ids(dc) 2 . 4 a ids(dc) 2.8a ids(dc) 3 . 2 a 0 20 40 60 80 100 34 36 38 40 42 44 22 24 26 28 30 32 34 36 power added efficiency [%] output power [dbm] input power [dbm] ids(dc) 2.4a ids(dc) 2.8a ids(dc) 3.2a
elm5964 - 16f c - band internally matched fet 5 input power vs. output power, power added efficiency by temperature v ds =10v , i ds(dc) =2800ma @5.9ghz input power vs. output power, power added efficiency by temperature v ds =10v , i ds(dc) =2800ma @6.15ghz input power vs. output power, power added efficiency by temperature v ds =10v , i ds(dc) =2800ma @6.4ghz 0 20 40 60 80 100 34 36 38 40 42 44 22 24 26 28 30 32 34 36 power added efficiency [%] output power [dbm] input power [dbm] tc= - 40deg - c tc=20deg - c tc= 80 deg - c 0 20 40 60 80 100 34 36 38 40 42 44 22 24 26 28 30 32 34 36 power added efficiency [%] output power [dbm] input power [dbm] tc= - 40deg - c tc=20deg - c tc= 80 deg - c 0 20 40 60 80 100 34 36 38 40 42 44 22 24 26 28 30 32 34 36 power added efficiency [%] output power [dbm] input power [dbm] tc= - 40deg - c tc=20deg - c tc= 80 deg - c
elm5964 - 16f c - band internally matched fet 6 imd performance vs. output power by drain voltage i ds(dc) =2800ma @5.9ghz imd performance vs. output power by drain voltage i ds(dc) =2800ma @6.15ghz imd performance vs. output power by drain voltage i ds(dc) =2800ma @6.4ghz - 70 - 65 - 60 - 55 - 50 - 45 - 40 - 35 - 30 - 25 - 20 22 24 26 28 30 32 34 36 38 imd [dbc] output power [dbm] s.c.l. vds 8 v vds 9v vds 10v im3 im5 - 70 - 65 - 60 - 55 - 50 - 45 - 40 - 35 - 30 - 25 - 20 22 24 26 28 30 32 34 36 38 imd [dbc] output power [dbm] s.c.l. vds 8v vds 9 v vds 10v im3 im5 - 70 - 65 - 60 - 55 - 50 - 45 - 40 - 35 - 30 - 25 - 20 22 24 26 28 30 32 34 36 38 imd [dbc] output power [dbm] s.c.l. vds 8v vds 9v vds 10v im3 im 5
elm5964 - 16f c - band internally matched fet 7 imd performance vs. output power by quie scent drain current v ds =10v @5.9ghz imd performance vs. output power by quie scent drain current v ds =10v @6.15ghz imd performance vs. output power by quie scent drain current v ds =10v @6.4ghz - 70 - 65 - 60 - 55 - 50 - 45 - 40 - 35 - 30 - 25 - 20 22 24 26 28 30 32 34 36 38 imd [dbc] output power [dbm] s.c.l. ids(dc) 2.4a ids(dc) 2.8a ids(dc) 3.2a im3 im5 - 70 - 65 - 60 - 55 - 50 - 45 - 40 - 35 - 30 - 25 - 20 22 24 26 28 30 32 34 36 38 imd [dbc] output power [dbm] s.c.l. ids(dc) 2.4a ids(dc) 2.8a ids(dc) 3.2a im 3 im5 - 70 - 65 - 60 - 55 - 50 - 45 - 40 - 35 - 30 - 25 - 20 22 24 26 28 30 32 34 36 38 imd [dbc] output power [dbm] s.c.l. ids(dc) 2.4a ids(dc) 2.8a ids(dc) 3.2a im3 im5
elm5964 - 16f c - band internally matched fet 8 imd performance vs. output power by temperature v ds =10v , i ds(dc) =2800ma @5.9ghz imd performance vs. output power by temperature v ds =10v , i ds(dc) =2800ma @6.15ghz imd performance vs. output power by temperature v ds =10v , i ds(dc) =2800ma @6.4ghz - 70 - 65 - 60 - 55 - 50 - 45 - 40 - 35 - 30 - 25 - 20 22 24 26 28 30 32 34 36 38 imd [dbc] output power [dbm] s.c.l. tc= - 40deg - c tc=20deg - c tc= 80 deg - c im3 im5 - 70 - 65 - 60 - 55 - 50 - 45 - 40 - 35 - 30 - 25 - 20 22 24 26 28 30 32 34 36 38 imd [dbc] output power [dbm] s.c.l. tc= - 40deg - c tc= 20 deg - c tc=80deg - c im3 im 5 - 70 - 65 - 60 - 55 - 50 - 45 - 40 - 35 - 30 - 25 - 20 22 24 26 28 30 32 34 36 38 imd [dbc] output power [dbm] s.c.l. tc= - 40deg - c tc=20deg - c tc=80deg - c im 3 im5
elm5964 - 16f c - band internally matched fet 9 ? s - parameter frequency (mhz) s11 s21 s12 s22 mag ang mag ang mag ang mag ang 570 0 0.613 - 134.2 3.216 - 21.8 0.036 - 63.3 0.448 - 117.0 580 0 0.564 - 151.8 3.506 - 37.1 0.043 - 81.4 0.415 - 131.0 590 0 0.511 - 171.8 3.751 - 54.0 0.049 - 101.2 0.372 - 146.2 6000 0.457 165.2 3.882 - 72.2 0.056 - 120.5 0.324 - 162.9 6100 0.410 139.3 3.870 - 90.9 0.063 - 137.3 0.277 177.6 6200 0.378 111.8 3.735 - 108.6 0.068 - 155.2 0.235 155.1 6300 0.367 84.5 3.660 - 124.7 0.074 - 173.1 0.209 129.8 6400 0.367 59.7 3.604 - 140.7 0.077 171.8 0.203 104.7 6500 0.371 38.2 3.539 - 156.6 0.079 155.7 0.216 83.0 6600 0.374 19.2 3.504 - 172.6 0.082 141.1 0.237 66.0 s11 s22 0 +10j +25j +50j +100j +250j - 10j - 25j - 50j - 100j - 250j 10 s21 s12 180 0 - +90 scale for | s 12 | 2 scale for |s 21 |
elm5964 - 16f c - band internally matched fet 10 ? package out line case style: ik pin assigment 1 : gate 2 : source 3 : drain 4 : source unit : mm
elm5964 - 16f c - band internally matched fet 11 for further information please contact: sumitomo electric device innovations, u . s . a ., inc. 2355 zanker rd. san jose, ca 95131 - 1138, u.s.a. tel: +1 408 232 - 9500 fax: +1 408 428 - 9111 sumitomo electric europe ltd. 220 centennial park, elstree wd6 3sl united kingdom tel: +44 (0)20 89538118 fax: +44 (0)20 89538228 sumitomo electric europe ltd. (italy branch) piazza don e. mapelli, 60 - 20099 sesto san giovanni, milano - italy tel: +39 - 02 - 496386 - 01 fax: +39 - 02 - 496386 - 25 sumitomo electric asia, ltd. room 2624 - 2637, 26/f., sun hung kai centre, 30 harbour road, wanchai, hong kong tel: +852 - 2576 - 0080 fax: +852 - 2576 - 6412 sumitomo electric device innovations, inc. 1000 kamisukiahara, show a - cho nakakomagun, yamanashi 409 - 3883, japan (kokubo industrial park) tel +81 - 55 - 275 - 4411 fax +81 - 55 - 275 - 9461 sumitomo electric industries, ltd. head office (tokyo) 3 - 9 - 1, shibaura, minato - ku , tokyo 108 - 8539, japan tel +81 - 3 - 6722 - 328 3 fax +81 - 3 - 6722 - 3284 caution ? sumitomo electric device innovations, inc. products contain gallium arsenide (gaas) which can be hazardous to the human body and the environment. for safety, observe the following procedures: ? do not put these products into the mouth. ? do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by products are dangerous to the human body if inhaled, ingested, or swallowed. ? observe government laws and company regulations when di scarding this product. this product must be discarded in accordance with methods specified by applicable hazardous waste procedures. sumitomo electric device innovations, inc. reserves the right to change products and specifications without notice. the information does not convey any license under rights of sumitomo electric device innovations, inc. or others. ? 200 9 sumitomo electric device innovations, inc.

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